Pitch doubled circuit layout

ABSTRACT

In one embodiment of the present invention, a method for connecting a plurality of bit lines to sense circuitry includes providing a plurality of bit lines extending from a memory array in a first metal layer. The plurality of bit lines are separated from each other by an average spacing x in a first region of the first metal layer. The method further includes elevating a portion of the plurality of bit lines into a second metal layer overlying the first metal layer. The elevated bit lines are separated from each other by an average spacing y in the second metal layer, with y&gt;x. The method further comprises extending a portion of the plurality of bit lines into a second region of the first metal layer. The extended bit lines are separated from each other by an average spacing z in the second region of the first metal layer, with z&gt;x. The method further comprises connecting a bit line in the second metal layer and a bit line in the first metal layer to the sense circuitry.

REFERENCE TO RELATED APPLICATIONS

This patent application is related to U.S. patent application Ser. No.10/931,771 (filed 31 Aug. 2004; the entire content of which is herebyincorporated by reference herein.

FIELD OF THE INVENTION

This invention relates generally to integrated circuit fabrication, andmore specifically to integrated circuit layout patterns and techniques.

BACKGROUND OF THE INVENTION

Integrated circuits are continually being made smaller as demand forportability, computing power, memory capacity and energy efficiency inmodern electronics grows. Therefore, the size of the integrated circuitconstituent features, such as electrical devices and interconnect linewidths; is also decreasing continually. The trend of decreasing featuresize is evident in memory circuits and memory devices such as dynamicrandom access memory (“DRAM”), static random access memory (“SRAM”),ferroelectric (“FE”) memory, electrically erasable programmable readonly memory (“EEPROM”), and so forth.

For example, flash memory is a type of EEPROM that typically comprisesmillions of individual circuit elements, known as memory cells, arrangedinto a densely-packed array. A flash memory cell typically comprises atransistor, a floating gate, and a control gate stacked above thefloating gate. The floating gate, typically composed of polycrystallinesilicon, is electrically isolated from the underlying semiconductorsubstrate by a thin dielectric layer which is typically formed of aninsulating oxide such as silicon oxide. Because charge is transferredacross the dielectric layer by quantum mechanical tunneling, thisdielectric layer is often referred to as a “tunnel oxide” layer. Suchtunnel oxide layers are typically approximately 100 Å thick. Propertiesof the tunnel oxide are controlled to enable the ability to read andwrite by tunneling, while avoiding data loss through charge trapping orleakage. The control gate is positioned above the floating gate, and iselectrically isolated from the floating gate by a storage dielectriclayer, such as oxide-nitride-oxide (“ONO”). Electrical access to thefloating gate is therefore through capacitors. By decreasing the size ofthe transistor devices that form the individual memory cells, the sizeof a flash memory array can likewise be decreased. Thus, storagecapacities can be increased by fitting more memory cells into a givencircuit volume. Generally, flash memory arrays have a higher density ofmemory cells than DRAM arrays.

The distance between an identical point on two features in neighboringintegrated circuit patterns, such as two features in a pattern of wordlines or bit lines, is commonly referred to the “pitch” of the pattern.Integrated circuit features are typically defined by openings in, andare spaced apart from each other by, a material such as an insulator ora conductor. Thus, the concept of pitch can be understood as the sum ofthe width of a feature and the width of the space separating thatfeature from a neighboring feature.

SUMMARY OF THE INVENTION

In one embodiment of the present invention, a method for connecting aplurality of bit lines to sense circuitry comprises providing aplurality of bit lines extending from a memory array in a first metallayer. The plurality of bit lines are separated from each other by anaverage spacing x in a first region of the first metal layer. The methodfurther comprises elevating a portion of the plurality of bit lines intoa second metal layer overlying the first metal layer. The elevated bitlines are separated from each other by an average spacing y in thesecond metal layer, with y>x. The method further comprises extending aportion of the plurality of bit lines into a second region of the firstmetal layer. The extended bit lines are separated from each other by anaverage spacing z in the second region of the first metal layer, withz>x. The method further comprises connecting a bit line in the secondmetal layer and a bit line in the first metal layer to the sensecircuitry.

In another embodiment of the present invention, a method comprisesproviding an array of conductive lines extending from a memory device.The method further comprises, in an interface region, separating thearray into two vertically separated metal layers. A first portion of theconductive lines are positioned in a lower metal layer, and a secondportion of the conductive lines are positioned in an upper metal layer.The method further comprises connecting the first and second portions ofconductive lines to sense circuitry. The interface region is positionedbetween the sense circuitry and the array.

In another embodiment of the present invention, a method of forming anintegrated circuit comprises patterning a first array of conductivelines in a first metal layer. A first portion of the conductive linesare present in a first region of the first metal layer. A second portionof the conductive lines are present in the first region of the firstmetal layer and in a second region of the first metal layer. Theconductive lines have an average line spacing of x in the first region,and the conductive lines have an average line spacing of y in the secondregion, with y>x. The method further comprises forming a contact overthe first metal layer. The contact touches one of the conductive linesin the first portion of conductive lines. The method further comprisespatterning a second array of conductive lines in a second metal layerthat is vertically separated from the first metal layer. The secondarray has an average line spacing of z, wherein z>x. At least one of thesecond portion of conductive lines touches the contact. The methodfurther comprises connecting a conductive line from the second array anda conductive line from the second region of the first array to sensecircuitry.

In another embodiment of the present invention, an integrated circuitcomprises a first array of conductive lines extending from a memoryarray in a first dimension. The conductive lines in the first array areseparated from each other by an average spacing x in a second dimensionthat is orthogonal to the first dimension. The integrated circuitfurther comprises a plurality of contacts that provide electricalconnection from a first group of conductive lines in the first array toa second array of conductive lines. The second array is separated fromthe first array in a third dimension that is orthogonal to the first andsecond dimensions. The conductive lines in the second array areseparated from each other by an average spacing y in the seconddimension, wherein y>x. The integrated circuit further comprises a thirdarray of conductive lines that are electrically connected to a secondgroup of conductive lines in the first array. The third array isseparated from the second array in the third dimension. The conductivelines in the third array are separated from each other by an averagespacing z in the second dimension, wherein z>x. The integrated circuitfurther comprises sense circuitry. At least a portion of the conductivelines in the second array and at least a portion of the conductive linesin the third array are electrically connected to the sense circuitry.

In another embodiment of the present invention, a system comprises amemory device. The system further comprises a first array of conductivelines coupled to the memory device. The first array is positioned in afirst region of a first metal layer. The conductive lines in the firstarray are spaced apart from each other in a first dimension by anaverage spacing x. The system further comprises a second array ofconductive lines positioned in a second metal layer that is separatedfrom the first metal layer in a second dimension. The second dimensionis orthogonal to the first dimension. The conductive lines in the secondarray are spaced apart from each other in the first dimension by anaverage spacing y, with y>x. The conductive lines in the second arrayare electrically connected to a portion of the conductive lines in thefirst array. The system further comprises a third array of conductivelines positioned in a second region of the first metal layer. Theconductive lines in the third array are spaced apart from each other inthe first dimension by an average spacing z, with z>x. The conductivelines in the third array are electrically connected to a portion of theconductive lines in the first array. The system further comprises sensecircuitry having a plurality of contacts. A first group of the contactsare electrically connected to the conductive lines in the third array. Asecond group of the contacts are electrically connected to conductivelines in the second array.

In another embodiment of the present invention, a memory devicecomprises an array of bit lines extending from a memory array in a firstmetal layer. The bit lines are spaced apart from each other by anaverage spacing x in a first region of the first metal layer. A firstportion of the bit lines are shunted from the first region of the firstmetal layer to a second metal layer. The bit lines in the second metallayer are spaced apart from each other by an average spacing y, withy>x. A second portion of the bit lines are extended from the firstregion of the first metal layer to a second region of the first metallayer. The second region of the first metal layer is vertically spacedapart from the second metal layer. The bit lines in the second region ofthe first metal layer are spaced apart from each other by an averagespacing z, where z>x. The memory device further comprises sensecircuitry having a plurality of contacts. A first portion of thecontacts are electrically connected to bit lines in the first metallayer. A second portion of the contacts are electrically connected tobit lines in the second metal layer.

In another embodiment of the present invention, a computer comprises amemory device. The computer further comprises a first array of n+m bitlines formed in a first metal layer. The n+m bit lines in the firstarray are spaced apart from each other by a first spacing interval. Thecomputer further comprises a second array of m bit lines formed in asecond metal layer overlying the first metal layer. The m bit lines inthe second array are spaced apart from each other by a second spacinginterval. The computer further comprises a third array of n bit linesformed in the first metal layer. The n bit lines in the third array arespaced apart from each other by a third spacing interval. The firstarray is positioned between the memory device and the third array. Thefirst spacing interval is smaller than the second and third spacingintervals. Each of the n+m bit lines in the first array is connected toone of the n bit lines in the third array or one of the m bit lines inthe second array. The computer further comprises sense circuitry havinga plurality of contacts. A first contact is electrically connected toone of the n bit lines in the third array. A second contact iselectrically connected to one of the m bit lines in the second array.

In another embodiment of the present invention, a method of using amemory device comprises providing a memory array in an integratedcircuit. The memory array has a plurality of bit lines extendingtherefrom. The plurality of bit lines are spaced apart from each otherby a spacing x in a region proximal to the memory array. The methodfurther comprises providing a first electrical signal on a first bitline extending from the memory array. The first electrical signal isrouted at least partially on a first metal level of the integratedcircuit to a multiplexer. A distal region of the first bit line isseparated from an adjacent bit line by a spacing z, with z>x. The methodfurther comprises providing a second electrical signal on a second bitline extending from the memory array. The second electrical signal isrouted at least partially on a second metal level of the integratedcircuit to the multiplexer. The second metal level is verticallyseparated from the first metal level. A distal region of the second bitline is separated from an adjacent bit line by a spacing y, with y>x.The method further comprises amplifying the first and second electricalsignals using a sense amplifier that is coupled to the multiplexer.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the circuit layouts disclosed herein areillustrated in the accompanying drawings, which are for illustrativepurposes only. The drawings comprise the following figures, in whichlike numerals indicate like parts.

FIG. 1 is a schematic illustration for providing a multiplexedconnection between memory array bit lines and a sense amplifier.

FIG. 2 is a schematic illustration of an exemplary circuit layout forspreading out a plurality of bit lines between a memory array and sensecircuitry.

FIG. 3 is a schematic illustration of the layout of FIG. 2, furtherillustrating the separation of bit lines into first and second metallayers.

FIG. 4 is a schematic illustration of an exemplary layout for a portionof the first interface region of FIG. 2.

FIG. 5 is a schematic illustration of an exemplary layout for a portionof the second interface region of FIG. 2.

FIG. 6 is a schematic illustration of another exemplary circuit layoutfor spreading out a plurality of bit lines between a memory array andsense circuitry.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

As feature sizes decrease, ever greater demands are placed on thetechniques used to form the features and to layout the features into afunctional integrated circuit design. For example, photolithography iscommonly used to pattern features, such as bit lines or word lines, inan integrated circuit. However, due to optical factors such as radiationwavelength, photolithography techniques have a minimum pitch below whichfeatures cannot be formed reliably. Thus, the minimum pitch of aphotolithographic technique will limit the size of the features formedusing that technique.

Pitch doubling is one method used to extend the capabilities ofphotolithographic techniques beyond their minimum pitch. A pitchdoubling technique is described in U.S. Pat. No. 5,328,810 (issued 12Jul. 1994), the entire disclosure of which is hereby incorporated byreference herein. While pitch doubling addresses the challenge ofpatterning features with a pitch below that possible using onlyphotolithographic techniques, the challenge of providing a functionallayout of pitch doubled features remains.

For example, a typical segment of NAND flash memory array includesseveral 64 bit line segments that extend from the array periphery. Inone configuration, the pitch of this digit or bit line array is 2F,where F is the minimum feature size that a given photolithographictechnique is capable of resolving. In an embodiment where a pitch“doubling” technique is used to decrease the width of the bit lines andthe spacers separating the bit lines, the density of the bit line arrayis further increased, such that the pitch of the bit line array isreduced to F. For example, in an embodiment wherein 50 nm bit lines areseparated by 50 nm spacers, the pitch of the bit line array extendingfrom the memory cell is 100 nm. Using advanced photolithographictechniques, the width of the bit lines and spacers can be furtherdecreased, for example to 35 nm or less. The circuit layout designs andtechniques disclosed herein are usable with patterning techniquescapable of forming even smaller bit lines and spacers. In an exemplaryembodiment, the spacers used to separate the bit lines are regions ofoxide material, such as silicon oxide.

In certain embodiments, the memory array is configured such that all 64bit lines extend from one side of the array such that the array sensecircuitry, used to measure signals provided on the bit lines, ispositioned on one side of the array, rather than surrounding the array.Such positioning of the sense circuitry further facilitates reducing thesize of the integrated circuit by conserving signal routing space.Positioning the sense circuitry on one side of the array also simplifiesthe circuit layouts used to connect the sense circuitry to otherelectrical components and enables faster timing to be achieved.

Sense circuitry is used to detect current, voltages and/or otherelectrical properties on the bit lines extending from the memory array.For example, a series of latches is often used to sense voltage on thebit lines, and to amplify the sensed voltage. Other sense circuitry ispreferably also employed. Typically, a pair of bit lines are provided toa multiplexer, the output of which is provided to a single senseamplifier. This configuration, schematically illustrated in FIG. 1,allows a single sense amplifier to be used to measure signals on twodifferent bit lines.

While configuring densely packed bit lines to extend from one side ofthe memory array provides certain advantages as expounded herein, ithas, to this point, also provided challenges with respect to connectingthe densely packed bit lines to the sense circuitry. For example, in atypical flash memory array having 64 bit lines extending from the array,it has previously been difficult or impossible to reliably connect bitlines having a width less than about 150 nm, and especially bit lineshaving a width less than about 100 nm, to the sense circuitry.Therefore, Applicants have developed improved circuit layout designs andmethods for connecting densely packed bit lines from a memory array tosense circuitry.

To facilitate the connection of an array of densely packed bit lines tosense circuitry at the periphery of a memory array, the bit lines areseparated into two vertically separated levels. In one embodiment, thisseparating of the bit lines is accomplished in a first interface regionthat is located between the memory array and the sense circuitry. In thefirst interface region, a portion of the bit lines are elevated to asecond metal level that is vertically separated from the bit lines thatremain in the first metal level. The first interface region optionallyincludes multiple stages or “transition regions” where multiple bitlines are elevated to the second metal level in groups. In a secondinterface region located between the first interface region and thesense circuitry, the remaining bit lines in the first metal level are“spread out” to occupy the space created by elevating bit lines to thesecond metal level in the first interface region. Preferably this schemeis employed to maintain connections from one series of parallel lines(memory array bit lines in the illustrated embodiment) to one type ofcircuitry (sense circuitry in the illustrated embodiment) on one side ofthe array. However, an ordinarily-skilled artisan will appreciateapplication of the principles and advantages disclosed herein to otherarrays and to other connecting circuitry.

This arrangement is schematically illustrated in FIG. 2, whichillustrates a plurality of bit lines 10 extending from a memory array12. A plurality of the bit lines 10 are elevated to a second metal layerin a first interface region 14. The second metal layer is not shown inFIG. 2 for clarity. By elevating a portion of the bit lines 10 to thesecond metal layer, fewer bit lines remain in the first metal layer ascompared to the total number of bit lines extending from the memoryarray 12. In certain embodiments, the first interface region optionallyincludes multiple stages where bit lines are elevated, or “converted”,to the second metal layer. FIG. 2 schematically illustrates one of thesestages.

Once a portion of the bit lines are elevated to the second metal layer,the bit lines remaining in the first metal layer are spaced apart fromeach other in a second interface region 16. The spaced apart bit linesare then connected to sense circuitry 18, which can also be configuredto receive contacts from the bit lines present in the second metallayer.

A schematic view of this arrangement illustrating the bit linesseparated into first and second metal layers is provided in FIG. 3. Inparticular, FIG. 3 illustrates that n bit lines are elevated to thesecond metal layer. Elevating a portion of the bit lines to the secondmetal layer allows the average spacing between bit lines to be increasedfrom x in a first region of the first metal layer to y in the secondmetal layer, and z in a second region of the first metal layer. Thelayout schematically illustrated in FIGS. 2 and 3 advantageously allowsthe sense circuitry 18 to be connected to spaced apart bit lines, ratherthan the densely-packed bit lines that extend from the memory array 12.

The bit line layouts and layout techniques disclosed herein are usablewith a wide variety of bit line widths and spacings. For example, in oneembodiment, the width of the bit lines 10 extending from the memoryarray 12 is preferably between about 35 nm and about 200 nm, is morepreferably between about 50 nm and about 150 nm, and is most preferablybetween about 50 nm and about 100 nm. In one embodiment, the spacingbetween the bit lines 10 extending from the memory array 12 ispreferably between about 35 nm and about 250 nm, is more preferablybetween about 50 nm and about 200 nm, and is most preferably betweenabout 50 nm and about 100 nm. In an exemplary embodiment, the spacing ofthe bit lines 10 extending from the memory array 12 is approximatelyequal to the width of the bit lines 10. In a preferred embodiment, thebit lines and spacers are formed using a pitch doubling technique.

As described herein, a portion of the bit lines extending from thememory array 12 are separated into a second metal layer, thereby leavinga reduced number of bit lines remaining in the first metal layer, asillustrated in FIG. 3. The bit lines remaining in the first metal layerare then spread out in the second interface region 16 therebyfacilitating contact with sense circuitry 18. In one embodiment, theaverage spacing between bit lines in the second interface region of thefirst metal layer is preferably increased to between about 50 nm andabout 450 nm, more preferably to between about 75 nm and about 300 nm,and most preferably to between about 100 nm and about 200 nm. In anexemplary embodiment, the average spacing between bit lines in thesecond interface region of the first metal layer is preferably betweenone and ten times the width of the bit lines, more preferably betweentwo and eight times the width of the bit lines, and most preferablybetween two and seven times the width of the bit lines. In certainembodiments, wherein bit lines are arranged into groups separated by agap, as described in greater detail below, the spacing between bit linesis an average spacing across an array segment that includes at least onegroup and at least one gap.

In one embodiment, the bit lines in the second metal layer are not pitchdoubled. Therefore, in such embodiments electrical signals passingthrough the bit lines in the second metal layer originate in a pitchdoubled array of bit lines extending from the memory array, and arelater converted to a non-pitch doubled array of bit lines in the secondmetal layer. In one embodiment, the spacing between the bit lines in thesecond metal level is preferably between about 70 nm and about 500 nm,is more preferably between about 100 nm and about 400 nm, and is mostpreferably between about 100 nm and about 200 nm.

Based on the foregoing, an exemplary integrated circuit layout forconductive lines extending from a memory device includes three arrays ofconductive lines. The first array of conductive lines extends from thememory device in a first dimension corresponding to the “length” of theconductive lines. The conductive lines of the first array are alsospaced apart from each other in a second width dimension that isorthogonal to the first dimension. The conductive lines of the firstarray are spaced apart from each other by a spacing “width”.

The second array of conductive lines is spaced apart from the firstarray in a third or vertical dimension that is orthogonal to both thefirst and second dimensions. That is, the second array is separated fromthe first array by a “height”. The third array of conductive lines isalso separated from the second array in the third dimension. Likewise,the conductive lines of the third array generally extend parallel to theconductive lines of the first array in the first dimension. In oneembodiment, the number of conductive lines in the first array equals thetotal number of conductive lines in the second and third arrayscombined.

Such embodiments allow electrical signals to be provided from a memorydevice to sense circuitry on bit lines having varying widths and varyingspacings. For example, in one embodiment an electrical signal is passedfrom the memory array, into an upper metal layer as disclosed herein,and to sense circuitry. Using an exemplary layout disclosed herein, theelectrical signal passes from pitch doubled bit lines (in the firstmetal layer) to non-pitch doubled bit lines (in the second metal layer).In certain embodiments, bit lines in the third array are arranged intogroups separated by a gap. In one such embodiment, the average bit linespacing within a group is approximately equal to the bit line spacing xin the first array. The bit line groups are separated by a gap, suchthat the average bit line spacing in the third array is z, asillustrated in FIG. 3. In one embodiment, the gap is configured to havea width sufficient to accommodate a connection between the second arrayand the sense circuitry.

In an exemplary embodiment, the bit lines to be elevated to the secondmetal layer are connected to landing pads. The landing pads, which areconnected to conductive vias that extend upwardly to the second metallayer, have a width greater than the pitch of the bit line array.Therefore, the bit lines at the edge of the bit line array are selectedfor elevation to the second metal layer. This configuration allows thelanding pads to be placed at the edges of the bit line array, asillustrated in FIG. 4. In particular, FIG. 4 illustrates that a selectedportion of the plurality of bit lines 10 which are located along theedges of the bit line array have been “turned out” to connect withlanding pads 20. The landing pads 20 allow the selected bit lines to beelevated to a second metal layer. In FIG. 4, the bit lines on the secondmetal layer are indicated by reference numeral 10′, and are shown asthicker lines. Optionally, the bit lines in the second metal layer arenot formed using a pitch doubling technique, and thus are wider than thebit lines in the first metal layer. The illustrated inwardly steppedconfiguration advantageously causes only a small amount of space outsidethe bit line array to be consumed for positioning the landing pads 20.

Optionally, bit lines are elevated to the second metal layer in thefirst interface region 14 in multiple stages. One stage of elevating bitlines is illustrated in FIG. 4. An optional second stage of elevatingbit lines is illustrated in FIG. 6, which shows a region between thefirst stage (FIG. 4) and the sense circuitry. Specifically, FIG. 6illustrates an exemplary circuit layout for spreading apart bit lines 10remaining in the first metal layer, and elevating a selected portion ofsaid bit lines to the second metal layer. In this exemplary embodiment,bit lines 10 are spread apart and separated into a plurality of groups22 separated by a plurality of gaps 24. As illustrated in FIG. 6, thebit lines can be spread out by a width 2w without consuming additionalspace, wherein w is the width of the bit lines removed from each side ofthe array in the first stage (illustrated in FIG. 4).

Additional landing pads 20, illustrated in FIG. 6, are positioned in thegaps 24; the landing pads 20 are used to elevate a selected portion ofthe bit lines 10 to the second or upper metal layer. The elevated bitlines in the second metal layer are connected by vertical contacts tothe landing pads 20 in the first or lower metal layer. The elevated bitlines of the upper metal layer, indicated by 10′ in FIG. 4, are omittedfor purposes of clarity in FIG. 6. In a modified embodiment, more thantwo stages are used to elevate additional bit lines to the second metallayer.

Depending on the number of stages used to elevate bit lines from thefirst metal layer to the second metal layer, different proportions ofbit lines are elevated to the second metal layer in differentembodiments. In preferred embodiments, 1 of every k lines extending fromthe memory array is elevated to the second metal layer, where k ispreferably between 2 and 20, more preferably between 3 and 8, and mostpreferably between 3 and 5.

For purposes of clarity, the exemplary embodiments illustrated in FIGS.2 and 4 illustrate embodiments wherein only a relatively small number ofbit lines 10 extend from the memory array 12. However, while largernumbers of bit lines extend from the memory array in other embodiments,the patterning techniques disclosed herein can be repeated toaccommodate the larger number of bit lines. For example, in oneembodiment a memory array is divided into 64 segments, with 512 bitlines extending from each segment for a total of 32,768 bit linesextending from the memory array. In such embodiments, each segment isseparated by approximately 600 nm to provide sufficient spacing outsideeach segment for placement of landing pads 20. In one embodiment, theseparation between array segments is provided by leaving a certainnumber of “dummy” bit lines unconnected. For example, in an embodimentwherein the pitch of the bit lines extending from the memory array is100 nm, a 1600 nm separation region is provided between array segmentsby leaving 16 unused bit lines unconnected. Preferably, the separationregion has a width between about 1000 nm and about 10000 nm, morepreferably the separation region has a width between about 1000 nm andabout 2000 nm, and most preferably the separation region has a widthbetween about 1200 nm and about 1800 nm.

Once a portion of the bit lines are elevated to a second metal layer,the remaining bit lines in the lower or first metal level can be spacedout to occupy the area occupied by the elevated bit lines. Thisadvantageously facilitates connection of the bit lines to sensecircuitry, such as the multiplexer illustrated in FIG. 1, usingconventional techniques. Generally, such conventional techniques wouldbe unable to connect a densely-packed array of pitch doubled bit linesto the sense circuitry. Furthermore, since the portion of the lines onthe second layer are more spaced apart, they need not be pitch doubled,as indicated by the thicker lines 10′ shown in FIG. 4.

FIG. 5 illustrates a portion of the second interface region 16 whereinthe bit lines 10, including the bit lines in the second metal level 10′,are connected to multiplexer contacts 22. As illustrated, the bit linesin the lower metal level are “spread out” to accommodate the multiplexercontacts 22 dropping from bit lines in the upper level. The bit linescan be spread out without extending outside the array segment because aportion of the bit lines were removed to the second metal layer in thefirst interface region 14. In one embodiment, one of the multiplexercontacts is electrically connected to a bit line in the lower metallevel, and another of the multiplexer contacts is electrically connectedto a bit line in the upper metal level.

The circuit layout techniques disclosed herein can be used with bit linearrays that are pitch doubled, as well as with bit line arrays that arenot pitch doubled. Even for bit line arrays which are not pitch doubled,the spacing techniques disclosed herein provide more space for makingelectrical connections to sense circuitry, and therefore allow suchconnections to be made more reliably, and with fewer defects. However,in a preferred embodiment, the methods and layouts disclosed hereinfacilitate connection of pitch doubled bit lines to non-pitch doubledsense circuitry. Advantageously, certain of the embodiments disclosedherein do not require splitting the bit lines from different sides ofthe memory array, and do not require significantly spreading the bitlines outside the original array dimensions.

The bit lines arrays disclosed herein can be formed using conventionalmaterials, such as tungsten, copper, and aluminum. In one embodiment,the bit lines are formed suing a damascene process.

SCOPE OF THE INVENTION

While the foregoing detailed description discloses several embodimentsof the present invention, it should be understood that this disclosureis illustrative only and is not limiting of the present invention. Itshould be appreciated that the specific configurations and operationsdisclosed can differ from those described above, and that the methodsdescribed herein can be used in contexts other than integrated circuitlayout.

1. A method for connecting a plurality of bit lines to sense circuitry,the method comprising: providing a plurality of bit lines extending froma memory array in a first metal layer, wherein the plurality of bitlines are separated from each other by an average spacing x in a firstregion of the first metal layer; elevating a portion of the plurality ofbit lines into a second metal layer overlying the first metal layer,wherein the elevated bit lines are separated from each other by anaverage spacing y in the second metal layer, and wherein y>x; extendinga portion of the plurality of bit lines into a second region of thefirst metal layer, wherein the extended bit lines are separated fromeach other by an average spacing z in the second region of the firstmetal layer, and wherein z>x; connecting a bit line in the second metallayer and a bit line in the first metal layer to the sense circuitry,wherein the sense circuitry includes a multiplexer having contacts thatare positioned between two bit lines in the first metal layer.
 2. Themethod of claim 1, further comprising separating the bit lines that areextended into the second region of the first metal layer into aplurality of groups separated by a plurality of gaps having a gap width,wherein the gap width is dimensioned to accommodate a contact between abit line in the second metal layer and the sense circuitry.
 3. Themethod of claim 1, wherein the second metal layer overlies the secondregion of the first metal layer.
 4. The method of claim 1, wherein theplurality of bit lines in the first region of the first metal layer areseparated from each other by oxide regions.
 5. The method of claim 1,wherein elevating a portion of the plurality of bit lines furthercomprises forming a plurality of contacts positioned between the firstmetal layer and the second metal layer, wherein the contacts have adimension larger than the spacing x.
 6. The method of claim 1, whereinthe memory array is a flash memory array.
 7. The method of claim 1,wherein the sense circuitry further comprises a sense amplifier.
 8. Themethod of claim 1, wherein the multiplexer converts an input of two bitlines into one output line that is connected to a sense amplifier. 9.The method of claim 1, wherein the bit lines comprise a materialselected from the group consisting of tungsten, aluminum and copper. 10.The method of claim 1, wherein the bit lines are provided using a pitchdoubling technique.
 11. The method of claim 1, wherein elevating aportion of the plurality of bit lines further comprises: elevating afirst group of bit lines into the second metal layer in a firsttransition region; and elevating a second group of bit lines into thesecond metal layer in a second transition region, wherein the secondtransition region is positioned below the second metal layer.
 12. Themethod of claim 11, wherein: the plurality of bit lines extending fromthe memory array form a bit line array; the first group of bit linesthat are elevated into the second metal layer are selected from an edgeof the bit line array; and at least a portion of the second group of bitlines that are elevated into the second metal layer are selected from acenter portion of the bit line array.
 13. The method of claim 1,wherein: the plurality of bit lines extending from the memory array forma bit line array; elevating a portion of the plurality of bit linesfurther comprises forming a plurality of contacts positioned between thefirst metal layer and the second metal layer; and at least one of theplurality of contacts is at least partially positioned in a separationregion that is laterally adjacent to the bit line array.
 14. The methodof claim 13, wherein only one of the plurality of contacts is at leastpartially positioned in a separation region that is laterally adjacentto the bit line array.
 15. The method of claim 13, wherein at least aportion of the portion of the plurality of bit lines that are elevatedare selected from an edge of the bit line array.
 16. The method of claim13, wherein the portion of the plurality of bit lines that are elevatedare selected from a center portion of the bit line array.
 17. The methodof claim 13, wherein the separation region separates the bit line arrayfrom an adjacent bit line array, and wherein the separation region has awidth between about 2000 nm and about 1000 nm.
 18. The method of claim1, wherein the spacing x is between about 35 nm and about 250 nm. 19.The method of claim 18, wherein the spacing y is between about 70 nm andabout 500 nm.
 20. The method of claim 18, wherein the spacing z isbetween about 50 nm and about 450 nm.
 21. The method of claim 1, whereinthe spacing x is between about 50 nm and about 200 nm.
 22. The method ofclaim 21, wherein the spacing y is between about 100 nm and about 400nm.
 23. The method of claim 21, wherein the spacing z is between about75 nm and about 300 nm.
 24. The method of claim 1, wherein the spacing xis between about 50 nm and about 100 nm.
 25. The method of claim 24,wherein the spacing y is between about 100 nm and about 200 nm.
 26. Themethod of claim 24, wherein the spacing z is between about 100 nm andabout 200 nm.
 27. The method of claim 1, wherein one of every k linesextending from the memory array is elevated to the second metal layer,wherein k is between about 2 and about
 20. 28. A method comprising:providing an array of conductive lines extending from a memory device;in an interface region, separating the array into two verticallyseparated metal layers, such that a first portion of the conductivelines are positioned in a lower metal layer, and a second portion of theconductive lines are positioned in an upper metal layer; providing aplurality of landing pads positioned in the lower metal layer, andpositioned in the interface region, wherein the landing pads have adimension that is greater than a width of the conductive lines in thearray; and connecting the first and second portions of conductive linesto sense circuitry, wherein the interface region is positioned betweenthe sense circuitry and the array.
 29. The method of claim 28, furthercomprising separating the first portion of the conductive lines into aplurality of groups separated by a plurality of gaps having a gap width,wherein the gap width is dimensioned to accommodate a connection betweenthe second portion of conductive lines and the sense circuitry.
 30. Themethod of claim 28, wherein the sense circuitry is positioned on onlyone side of the array.
 31. The method of claim 28, wherein one of everyk conductive lines in the array is connected to a conductive line in theupper metal layer, wherein k is between about 3 and about
 5. 32. Themethod of claim 28, wherein the conductive lines in the array comprisebit lines extending from a flash memory array.
 33. The method of claim28, wherein the conductive lines separated into the upper metal layerhave an average spacing that is greater than an average spacing of theconductive lines in the array.
 34. The method of claim 28, wherein theconductive lines in the array are separated from each other by oxideregions.
 35. The method of claim 28, wherein the conductive linesseparated into the lower metal layer have an average spacing that isgreater than an average spacing of the conducive lines in the array. 36.The method of claim 28, wherein the sense circuitry comprises amultiplexer and a sense amplifier.
 37. The method of claim 28, whereinthe conductive lines in the array comprise a material selected from thegroup consisting of tungsten, aluminum and copper.
 38. The method ofclaim 28, wherein the conductive lines in the array have a line widththat is smaller than a line width of the conducive lines positioned inthe upper metal layer.
 39. The method of claim 28, wherein theconductive lines in the first metal level are provided using a pitchdoubling technique.
 40. A method of forming an integrated circuit, themethod comprising: patterning a first array of conductive lines in afirst metal layer, wherein a first portion of the conductive lines arepresent in a first region of the first metal layer, a second portion ofthe conductive lines are present in the first region of the first metallayer and in a second region of the first metal layer, and theconductive lines have an average line spacing of x in the first region,and the conductive lines have an average line spacing of y in the secondregion, wherein y>x; forming a contact over the first metal layer,wherein the contact touches one of the conductive lines in the firstportion of conductive lines, and wherein at least a portion of thecontact is positioned in a separation region that is laterally adjacentto the first region of the first array; patterning a second array ofconductive lines in a second metal layer that is vertically separatedfrom the first metal layer, wherein the second array has an average linespacing of z, wherein z>x, and wherein at least one of the secondportion of conductive lines touches the contact; and connecting aconductive line from the second array and a conductive line from thesecond region of the first array to sense circuitry.
 41. The method ofclaim 40, wherein the sense circuitry is positioned on only one side ofthe first array.
 42. The method of claim 40, wherein at least a portionof only one contact is positioned in the separation region.
 43. Themethod of claim 40, wherein the conductive lines in the first metallayer are separated from each other by oxide regions of varying width.44. The method of claim 40, wherein the conductive lines in the firstregion of the first metal layer have a width that is less than a widthof the conductive lines in the second metal layer.
 45. The method ofclaim 40, wherein the conductive lines of the first region of the firstarray are connected to a memory array.
 46. An integrated circuitcomprising: a first array of conductive lines extending from a memoryarray in a first dimension, wherein the conductive lines in the firstarray are separated from each other by an average spacing x in a seconddimension that is orthogonal to the first dimension a plurality ofcontacts that provide electrical connection from a first group ofconductive lines in the first array to a second array of conductivelines, wherein the second array is separated from the first array in athird dimension that is orthogonal to the first and second dimensions,and the conductive lines in the second array are separated from eachother by an average spacing y in the second dimension, wherein y>x; athird array of conductive lines that are electrically connected to asecond group of conductive lines in the first array, wherein the thirdarray is separated from the second array in the third dimension, a ratioof number of conductive lines in the second array to number ofconductive lines in the third array is between about 1:3 and about 1:20,and the conductive lines in the third array are separated from eachother by an average spacing z in the second dimension, wherein z>x; andsense circuitry, wherein at least a portion of the conductive lines inthe second array and at least a portion of the conductive lines in thethird array are electrically connected to the sense circuitry.
 47. Theintegrated circuit of claim 46, wherein the conductive lines in thethird array are separated into a plurality of groups separated by aplurality of gaps having a gap width, wherein the gap width isdimensioned to accommodate a contact between a conductive line in thesecond array and the sense circuitry.
 48. The integrated circuit ofclaim 47, wherein the conductive lines within the plurality of groupshave an average line spacing x.
 49. The integrated circuit of claim 46,wherein the plurality of contacts comprises a first group of contactsand a second group of contacts that is separated from the first group ofcontacts in the first dimension.
 50. The integrated circuit of claim 46,further comprising a separation region positioned adjacent to the firstarray in the second dimension, wherein at least one of the plurality ofcontacts is at least partially positioned in the separation region. 51.The integrated circuit of claim 50, wherein at least a portion of onlyone contact is positioned in the separation region.
 52. The integratedcircuit of claim 46, wherein the sense circuitry comprises amultiplexer.
 53. The integrated circuit of claim 46, wherein theplurality contacts positioned within the first array have a heightgreater than the first pitch.
 54. The integrated circuit of claim 46,wherein the conductive lines comprise bit lines extending from a flashmemory array.
 55. The integrated circuit of claim 46, wherein theconductive lines comprise a material selected from the group consistingof tungsten, aluminum and copper.
 56. A system comprising: a memorydevice; a first array of conductive lines having a first width, theconductive lines being coupled to the memory device, wherein the firstarray is positioned in a first region of a first metal layer, andwherein the conductive lines in the first array are spaced apart fromeach other in a first dimension by an average spacing x; a second arrayof conductive lines positioned in a second metal layer that is separatedfrom the first metal layer in a second dimension, wherein the conductivelines in the second array have a second width that is greater than thefirst width, the second dimension is orthogonal to the first dimension,the conductive lines in the second array are spaced apart from eachother in the first dimension by an average spacing y, y>x, and theconductive lines in the second array are electrically connected to aportion of the conductive lines in the first array; a third array ofconductive lines positioned in a second region of the first metal layer,wherein the conductive lines in the third array are spaced apart fromeach other in the first dimension by an average spacing z, z>x, and theconductive lines in the third array are electrically connected to aportion of the conductive lines in the first array; and sense circuitryhaving a plurality of contacts, wherein a first group of the contactsare electrically connected to the conductive lines in the third array,and wherein a second group of the contacts are electrically connected toconductive lines in the second array.
 57. The system of claim 56,wherein the sense circuitry contacts are arrayed along the seconddimension.
 58. The system of claim 56, wherein first array includes anumber of conductive lines that is equal to an aggregate number ofconductive lines in the second and third arrays.
 59. The system of claim56, further comprising a plurality of inter-level contacts positionedbetween the first metal layer and the second metal layer, wherein theinter-level contacts are coupled to the conductive lines in the secondarray.
 60. The system of claim 56, further comprising a plurality ofinter-level contacts positioned between the first metal layer and thesecond metal layer, wherein: the inter-level contacts are coupled to theconductive lines in the second array; and at least one of theinter-level contacts is at least partially positioned in an arrayseparation region that is located adjacent to the array in the firstdimension.
 61. The system of claim 56, wherein only two of theinter-level contacts are at least partially positioned in the arrayseparation region.
 62. The system of claim 56, wherein no more than twoof the inter-level contacts are at lest partially positioned in thearray separation region.
 63. A memory device comprising: an array of bitlines extending from a memory array in a first metal layer, wherein: thebit lines are spaced apart from each other by an average spacing x in afirst region of the first metal layer, a first portion of the bit linesare shunted from the first region of the first metal layer to a secondmetal layer, such that the bit lines in the second metal layer arespaced apart from each other by an average spacing y, where y>x, and asecond portion of the bit lines are extended from the first region ofthe first metal layer to a second region of the first metal layer, suchthat the second region of the first metal layer is vertically spacedapart from the second metal layer, and such that the bit lines in thesecond region of the first metal layer are spaced apart from each otherby an average spacing z, where z>x; and sense circuity having aplurality of contacts, a multiplexer and a sense amplifier connected toan output of the multiplexer, wherein a first portion of the contactsare electrically connected to bit lines in the first metal layer, andwherein a second portion of the contacts are electrically connected tobit lines in the second metal layer.
 64. The memory device of claim 63,wherein the array of bit lines extends from only one side of the memoryarray.
 65. The memory device of claim 63, wherein the bit linespositioned in the first metal layer have a first width that is less thana second width of the bit lines positioned in the second metal layer.66. The memory device of claim 63, wherein the bit lines comprise amaterial selected from the group consisting of tungsten, aluminum andcopper.
 67. The memory device of claim 63, further comprising aplurality of inter-level contacts positioned between the first metallayer and the second metal layer, wherein the inter-level contacts havea dimension that is greater than the average spacing x.
 68. A computercomprising: a memory device; a first array of n+m bit lines formed in afirst metal layer using a pitch doubling technique, wherein the n+m bitlines in the first array are spaced apart from each other by a firstspacing interval; a second array of m bit lines formed in a second metallayer overlying the first metal layer, wherein the m bit lines in thesecond array are spaced apart from each other by a second spacinginterval; a third array of n bit lines formed in the first metal layer,wherein the n bit lines in the third array are spaced apart from eachother by a third spacing interval, the first array is positioned betweenthe memory device and the third array, the first spacing interval issmaller than the second and third spacing intervals, and each of the n+mbit lines in the first array is connected to one of the n bit lines inthe third array or one of the m bit lines in the second array; and sensecircuitry having a plurality of contacts, wherein a first contact iselectrically connected to one of the n bit lines in the third array, andwherein a second contact is electrically connected to one of the m bitlines in the second array.
 69. The computer of claim 68, wherein thefirst array of bit lines is formed on one side of the memory device. 70.The computer of claim 68, wherein the sense circuitry contacts areformed in the third array, such that the contacts are positioned betweenbit lines in the third array.
 71. The computer of claim 68, wherein thebit lines formed in the first metal layer have a width that is less thana width of the bit lines formed in the second metal layer.
 72. Thecomputer of claim 68, wherein the sense circuitry comprises amultiplexer and a sense amplifier connected to an output of themultiplexer.
 73. The computer of claim 68, wherein the first spacinginterval is between about 35 nm and about 250 nm.
 74. The computer ofclaim 68, wherein the first spacing interval is between about 100 nm andabout 150 nm.
 75. The computer of claim 68, wherein the ratio of (n+m)to (m) is between about 3:1 and about 20:1.
 76. A method of using amemory device, the method comprising: providing a memory array in anintegrated circuit, wherein the memory array has a plurality of bitlines extending therefrom, and wherein the plurality of bit lines arespaced apart from each other by a spacing x in a region proximal to thememory array; providing a first electrical signal on a first bit lineextending from the memory array, wherein the first electrical signal isrouted at least partially on a first metal level of the integratedcircuit to a multiplexer, and wherein a distal region of the first bitline is separated from an adjacent bit line by a spacing z, with z>x;providing a second electrical signal on a second bit line extending fromthe memory array, wherein the second electrical signal is routed atleast partially on a second metal level of the integrated circuit to themultiplexer, wherein the second metal level is vertically separated fromthe first metal level, and wherein a distal region of the second bitline is separated from an adjacent bit line by a spacing y, with y>x;and amplifying the first and second electrical signals using a senseamplifier that is coupled to the multiplexer.
 77. The method of claim76, wherein the bit lines in the memory array are formed using a pitchdoubling technique.
 78. The method of claim 76, wherein routing thesecond electrical signal further comprises routing the second electricalsignal into an array separation region that is located outside of andlaterally adjacent to the memory array.
 79. The method of claim 76,wherein routing the second electrical signal further comprises passingthe second electrical signal through an inter-level contact that is atleast partially positioned in an array separation region that is locatedoutside of and laterally adjacent to the memory array.
 80. The method ofclaim 76, wherein the second bit line has a region of increased width inthe second metal level.
 81. The method of claim 76, wherein the bitlines comprise a material selected from the group consisting oftungsten, aluminum and copper.